Micrel APT44GA60BD30C
High Speed PT IGBT
FEATURES
● Fast switching with low EMI● Very Low Eoff for maximum efficiency
● Ultra low Cres for improved noise immunity
● Low conduction loss
● Low gate charge
● Increased intrinsic gate resistance for low EMI
● RoHS compliant
TYPICAL APPLICATIONS
● ZVS phase shifted and other full bridge● Half bridge
● High power PFC boost
● Welding
● UPS, solar, and other inverters
● High frequency, high efficiency industrial
ABSOLUTE MAXIMUM RATINGS
Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Ratings 600 78 44 130 ±30 337 130A @ 600V -55 to 150 300 Unit V A V W Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds °C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25°C u...