C2371
Features
With TO-126 package Video applications
NPN Silicon Power Transistors
Rating 300 300 7.0 0.1 10 -55 to +150 -55 to +150 Unit V V V A W O C O C w.. Symbol V CEO V CBO V EBO IC PC TJ TSTG
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature
K D R E B
F G L H C
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage (IC=1.0m Adc, IB =0) Collector-Base Cutoff Current (VCB=200Vdc,IE =0) Emitter-Base Cutoff Current (VEB =7.0Vdc, IC=0) Forward Current Transfer ratio (IC=10m Adc, V CE=10Vdc) Collector-Emitter Saturation Voltage (IC=30m Adc, IB =3.0Adc) Min 300 ----Max --0.1 0.1 Units
1 2 J 3 J Q EMITTER COLLECTOR BASE
OFF CHARACTERISTICS
V (BR)CEO ICBO IEBO Vdc u Adc m Adc
!
PIN 1. PIN 2. PIN 3....
