DL914
Features l l l l l
omponents 21201 Itasca Street Chatsworth !"# $
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Fast Switching Speed Low Current Leakage Low Cost pression Bond Construction Surface Mount Application
500m W 100 Volt Silicon Switching Diode
MINIMELF
Cathode Mark
Maximum Ratings l Operation & Storage Temperature: -55o C to +150o C l Maximum Thermal Resistance: 35o C/W Junction to Ambient Electrical Characteristics @ 25o C Unless Otherwise Specified
Reverse Volt. Peak Reverse Volt. Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Maximum Instantaneous Forward Volt. Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time VR V RM IO P TOT TJ IFSM VF IR 25n A 50u A 4p F 4n S 75V 100V Resistive Load 150m A f>50Hz 500m W 200 C 500m A 8.3ms, half sine 1.0V IFM =10m A; T J =25o C V R =20V T J =25o C T J =150o C Measured at 1.0MHz, V R =4.0V IF =10m A V R =6V R L=100...
