ES2M Datasheet | Micro Commercial Components

Features For Mount Applications Surface Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250 °C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency - - - Maximum Ratings Operating Temperature: -50°C to +150°C Storage Temperature: -50°C to +150°C Maximum Thermal Resistance; 20°C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ES2A ES2A 50V 35V 50V ES2B ES2B 100V 70V 100V ES2C ES2C 150V 105V 150V ES2D ES2D 200V 140V 200V ES2G ES2G 400V 280V 400V ES2J ES2J 600V 420V 600V ES2K ES2K 800V 560V 800V ES2M ES2M 1000V 700V 1000V IF(AV) IFSM 2.0A 50A TJ = 75°C 8.3ms, half sine DIM A B C D E F G H J Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage INCHES MIN .078 .067 .002 --.035 .065 .205 .160 .100 MAX .116 .089 .008 .02 .055 .096 .224 .180 .112 DIMENSIONS MM MIN 1.98 1.70 .05 --.89 1.65 5.21 4.06 2.57 ES2A-D ES2G-K ES2M .975V 1.35V 1.60V MAX 2.95 2.25 .20 .51 1.40 2.45 5.69 4.57 2.84 NOTE IFM = 2.0A; TJ = 25°C- TJ = 25°C TJ = 100°C Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time SUGGESTED SOLDER PAD LAYOUT 0.090” 5µA 150µA 0.085” ES2A-D ES2G-K ES2M Trr CJ 50ns 60ns 100ns Typical Junction Capacitance 25p F IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V 0.070” - Pulse test: Pulse width 200 µsec, Duty cycle 2% .mccsemi. ES2A thru ES2M Figure 1 Typical Forward Characteristics 20 10 6 4 2 Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .2 .4 .6 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts .8 1.0 1.2 Amps 2.4 2.2 2.0 1.8 25°C 1.6 1.4 1.2 1.0 .8 .6 .4 Figure 2 Forward Derating Curve Single Phase, Half Wave .2 60Hz Resistive or Inductive Load 0 0 25 50 75 °C Average Forward Rectified...