BC351 Datasheet | Micro Electronics

BC 337 / BC 338 NPN Si-Epitaxial Planar Transistors General Purpose Transistors NPN 625 m W TO-92 (10D3) 0.18 g Power dissipation - Verlustleistung Plastic case Kunststoffgehäuse Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC Tj TS Grenzwerte (TA = 25/C) BC 337 45 V 50 V 5V 625 m W 1) 800 m A 150/C - 55…+ 150/C Kennwerte (Tj = 25/C) Min. Typ. 160 250 400 - - - - Max. 250 400 630 200 n A 200 n A 10 :A 10 :A BC 338 25 V 30 V Characteristics (Tj = 25/C) DC current gain - Kollektor-Basis-Stromverhältnis Group -16 VCE = 1 V, IC = 100 m A Group -25 Group -40 VCE = 40 V VCE = 20 V VCE = 40 V, Tj = 125/C VCE = 20 V, Tj = 125/C BC 337 BC 338 BC 337 BC 338 h FE h FE h FE ICES ICES ICES ICES 100 160 250 - - - - Collector-Emitter cutoff current - Kollektorreststrom ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 4 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector-Emitter breakdown voltage Collector-Emitter Durchbruchspannung IC = 10 m A IC = 0.1 m A Emitter-Base breakdown voltage Emitter-Basis-Durchbruchspannung IE = 10 :A IC = 500 m A, IB = 50 m A Base-Emitter voltage - Basis-Emitter-Spannung VCE = 1 V, IC = 300 m A Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 m A, f = 50 MHz Collector-Base Cap. - Kollektor-Basis-Kap. VCB = 10 V, f = 1 MHz CCB0 - Rth A f T - VBE - V(BR)EB0 VCEsat 5V - BC 337 BC 338 BC 337 BC 338 V(BR)CES V(BR)CES V(BR)CES...