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MMP7051 - MMP7000 Series Low - High Power PIN Diodes

Download the MMP7051 datasheet PDF. This datasheet also covers the MMP7010 variant, as both devices belong to the same mmp7000 series low - high power pin diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

The MicroMetrics MMP 7000 series PIN diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate.

Key Features

  • High Temperature Passivation for Reliability.
  • Grown Junction for sharp “I” Region Interface.
  • Full Area Gold Contact for the Lowest Capacitance and Largest Bonding Pad Available.
  • Lot Traceability and Lot Control, Assuring High Reproducibility Packaging.
  • Chip, Glass, Ceramic Our high temperature passivation and state of the art metallization produce diodes that are designed to cover a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMP7010_MicroMetrics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MMP7051
Manufacturer MicroMetrics
File Size 52.93 KB
Description MMP7000 Series Low - High Power PIN Diodes
Datasheet download datasheet MMP7051 Datasheet

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Other Datasheets by MicroMetrics

Part Number Description
MMP7050 MMP7000 Series Low - High Power PIN Diodes
MMP7052 MMP7000 Series Low - High Power PIN Diodes
MMP7053 MMP7000 Series Low - High Power PIN Diodes
MMP7010 MMP7000 Series Low - High Power PIN Diodes
MMP7011 MMP7000 Series Low - High Power PIN Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Control Devices Control Devices: MMP 7000 Series Low - High Power PIN Diodes Description The MicroMetrics MMP 7000 series PIN diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate. Combined with a grown junction P++ layer, this yields a very abrupt structured “I” region with minimum outdoping and low voltage punchthrough characteristics.