25LC080
Overview
- Low-power CMOS technology: - Write current: 3 mA maximum - Read current: 500 A typical - Standby current: 500 nA typical
- 1024 x 8-bit organization
- 16 byte page
- Write cycle time: 5 ms max.
- Self-timed erase and write cycles
- Block write protection: - Protect none, 1/4, 1/2 or all of array
- Built-in write protection: - Power-on/off data protection circuitry - Write enable latch - Write-protect pin
- Sequential read
- High reliability: - Endurance: 1 M cycles - Data retention: > 200 years - ESD protection: > 4000V
- 8-pin PDIP and SOIC (150 mil)
