1N6473 Datasheet | Microchip Technology

igh surge current and peak pulse power provides transient voltage protection for sensitive circuits. - Double-layer passivation - Internal “Category I” metallurgical bonds - Voidless hermetically sealed glass package - JAN/TX/TXV military qualifications available per MILPRF-19500/552 by adding JAN, JANTX, or JANTXV prefix. - Further options for screening in accordance with MILPRF-19500 for JANS equivalent level by using a “MS” prefix. - Surface-mount equivalents are also available in a squareend-cap MELF configuration with a “US” suffix (see separate data sheet). Applications - Military and other high reliability transient protection - Extremely robust construction - Working peak “standoff” voltage (VWM) from 5.0 V to 51.6 V - Available as 1500 W peak pulse power (PPP) - ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively - Secondary lightning protection per select levels in IEC61000-4-5 - Flexible axial-leaded mounting terminals - Nonsensitive to ESD per MIL-STD-750 Method 1020 - Inherently radiation hard as described in Micro Note 050 Figure 1. "C" Package Data Sheet © 2023 Microchip Technology Inc. and its subsidiaries DS00005028A - 1 1N6469-1N6476 Maximum Ratings 1. Maximum Ratings Maximum ratings taken at TA = 25 °C unless otherwise noted. Parameters/Test Conditions Symbol Junction and storage temperature Peak pulse power at tp = 1.0 ms (also see Figure 3-1, Figure 3-2, and Figure 3-4) Rated forward surge current at tp = 8.33 ms Impulse repetition rate (duty factor) Steady-state power1 (see Figure 3-4) Solder temperature at 10 s Thermal resistance at 3/8-inch lead length TJ and TSTG PPP IFSM IPP PD TSP...