24FC1026 Datasheet | Microchip Technology

Features - Low-Power CMOS Technology: - Read current: 450 µA, maximum - Standby current: 5 µA, maximum - Two-Wire Serial Interface, I2C patible - Cascadable Up to Four Devices - Schmitt Trigger Inputs for Noise Suppression - Output Slope Control to Eliminate Ground Bounce - 100 k Hz and 400 k Hz Clock patibility - 1 MHz Clock for FC Versions - Page Write Time 3 ms, Typical - Self-Timed Erase/Write Cycle - 128-Byte Page Write Buffer - Hardware Write-Protect - High Reliability: - More than one million erase/write cycles - Data retention > 200 years - ESD protection > 4000V - Factory Programming Available - Ro HS pliant - Temperature Ranges: - Industrial (I): -40C to +85C - Extended (E): -40C to +125C Packages - 8-Lead PDIP, 8-Lead SOIC and 8-Lead SOIJ Description The Microchip Technology Inc. 24XX1026(1) is a 128-Kbit x 8 (1024-Kbit) Serial Electrically Erasable PROM (EEPROM), capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal munications or data acquisition. This device has both byte write and page write capability of up to 128 bytes of data. This device is capable of both random and sequential reads. Reads may be sequential within address boundaries 0000h to FFFFh and 10000h to 1FFFFh. Functional address lines allow up to four devices on the same data bus. This allows for up to 4 Mbits total system EEPROM memory. Note 1: 24XX1026 is used in this document as a generic part number for the 24AA1026/24FC1026/24LC1026 devices. Package Type 8-Lead PDIP (Top View) 8-Lead SOIC/SOIJ (Top View) NC 1 A1 2 A2 3 VSS 4 8 VCC NC 7 WP A1 2 6 SCL A2 3 5 SDA...