48L256 Datasheet | Microchip Technology

256-Kbit SPI Serial EERAM Serial SRAM Features - Unlimited Reads/Unlimited Writes: - Standard serial SRAM protocol - Symmetrical timing for reads and writes - SRAM Array: - 32,768 x 8 bit - High-Speed SPI Interface: - Up to 66 MHz - Schmitt Trigger inputs for noise suppression - Low-Power CMOS Technology: - Active current: 5 m A (maximum) - Standby current: 300 μA (at 85°C maximum) - Hibernate current: 3 μA (at 85°C maximum) Hidden EEPROM Backup Features - Cell-Based Nonvolatile Backup: - Mirrors SRAM array cell-for-cell - Transfers all data to/from SRAM cells in parallel (all cells at same time) - Invisible-to-User Data Transfers: - VCC level monitored inside device - SRAM automatically saved on power disrupt - SRAM automatically restored on VCC return - 100,000 Backups Minimum (at 85°C) - 100 Years Retention (at 55°C) Other Features of the 48L256 - Operating Voltage Range: 2.7V-3.6V - Temperature Ranges: - Industrial (I): -40°C to +85°C - ESD Protection: >2,000V Packages...