MAXIMUM RATINGS
Symbol Parameter VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. All Ratings: TC = 25°C unless otherwise specified. Ratings UNIT 500 Volts 500 30 Amps ±30 Volts 445 Watts 0.28 °C/W -55 to 150 °C 300 STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions BVDSS RDS(ON) IDSS IGSS gfs VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) Drain-Source On-State Resistance 1 (VGS = 10V, ID = 15A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1mA) MIN TYP MAX UNIT 500 Volts 0.25 0.28 ohms 25 µA 250 ±100 nA 8 mhos 2 4 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Microchip Technology
