Datasheet Summary
1-Megabit (128K x 8) Paged Parallel EEPROM
Features
- Fast Read Access Time: 120 ns
- Automatic Page Write Operation:
- Internal address and data latches for 128 bytes
- Internal control timer
- Fast Write Cycle Time:
- Page Write cycle time: 10 ms maximum
- 1 to 128-byte Page Write operation
- Low-Power Dissipation:
- 40 mA active current
- 200 µA CMOS standby current
- Hardware and Software Data Protection
- DATA Polling for End of Write Detection
- High Reliability CMOS Technology:
- Endurance: 10,000 or 100,000 cycles
- Data retention: 10 years
- Single 5V ± 10% Supply
- CMOS and TTL patible Inputs and Outputs
- JEDEC® Approved Byte-Wide Pinout
- Industrial Temperature Ranges
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