Datasheet4U Logo Datasheet4U.com

AT28C010 - 1-Megabit (128K x 8) Paged Parallel EEPROM

Datasheet Summary

Description

3.

Description 6 3.1.

4.

Features

  • Fast Read Access Time: 120 ns.
  • Automatic Page Write Operation:.
  • Internal address and data latches for 128 bytes.
  • Internal control timer.
  • Fast Write Cycle Time:.
  • Page Write cycle time: 10 ms maximum.
  • 1 to 128-byte Page Write operation.
  • Low-Power Dissipation:.
  • 40 mA active current.
  • 200 µA CMOS standby current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Write Detection.

📥 Download Datasheet

Datasheet preview – AT28C010

Datasheet Details

Part number AT28C010
Manufacturer Microchip
File Size 468.22 KB
Description 1-Megabit (128K x 8) Paged Parallel EEPROM
Datasheet download datasheet AT28C010 Datasheet
Additional preview pages of the AT28C010 datasheet.

📁 Similar Datasheet

  • AT28C010 - 1-Megabit (128K x 8) Paged Parallel Military EEPROM (ATMEL Corporation)
  • AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM (ATMEL)
  • AT28C010-12DK - Space 1-MBit (128K x 8) Paged Parallel EEPROM (ATMEL)
  • AT28C040 - 4-Megabit (512K x 8) Paged Parallel EEPROM (ATMEL Corporation)
  • AT28C16 - 16K 2K x 8 CMOS E2PROM (ATMEL Corporation)
  • AT28C16-T - 16K (2K x 8) PCMCIA Nonvolatile Attribute Memory (ATMEL)
  • AT28C17 - 16K 2K x 8 CMOS E2PROM (ATMEL Corporation)
  • AT28C256 - 256K (32K x 8) Paged Parallel EEPROM (ATMEL Corporation)
  • AT28C64 - 64K (8K x 8) Parallel EEPROMs (ATMEL Corporation)
  • AT28C64B - 64K (8K x 8) Parallel EEPROM (ATMEL Corporation)
Other Datasheets by Microchip

Full PDF Text Transcription

Click to expand full text
1-Megabit (128K x 8) Paged Parallel EEPROM Features • Fast Read Access Time: 120 ns • Automatic Page Write Operation: – Internal address and data latches for 128 bytes – Internal control timer • Fast Write Cycle Time: – Page Write cycle time: 10 ms maximum – 1 to 128-byte Page Write operation • Low-Power Dissipation: – 40 mA active current – 200 µA CMOS standby current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology: – Endurance: 10,000 or 100,000 cycles – Data retention: 10 years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC® Approved Byte-Wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option Only Packages • 32-Lead PLCC, 32-Lead TSOP © 2020 Microchip Techn
Published: |