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AT28C010 - 1-Megabit (128K x 8) Paged Parallel EEPROM

General Description

3.

Description 6 3.1.

4.

Key Features

  • Fast Read Access Time: 120 ns.
  • Automatic Page Write Operation:.
  • Internal address and data latches for 128 bytes.
  • Internal control timer.
  • Fast Write Cycle Time:.
  • Page Write cycle time: 10 ms maximum.
  • 1 to 128-byte Page Write operation.
  • Low-Power Dissipation:.
  • 40 mA active current.
  • 200 µA CMOS standby current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Write Detection.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1-Megabit (128K x 8) Paged Parallel EEPROM Features • Fast Read Access Time: 120 ns • Automatic Page Write Operation: – Internal address and data latches for 128 bytes – Internal control timer • Fast Write Cycle Time: – Page Write cycle time: 10 ms maximum – 1 to 128-byte Page Write operation • Low-Power Dissipation: – 40 mA active current – 200 µA CMOS standby current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology: – Endurance: 10,000 or 100,000 cycles – Data retention: 10 years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC® Approved Byte-Wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option Only Packages • 32-Lead PLCC, 32-Lead TSOP © 2020 Microchip Techn