AT28C010
Overview
- Fast Read Access Time: 120 ns
- Automatic Page Write Operation: - Internal address and data latches for 128 bytes - Internal control timer
- Fast Write Cycle Time: - Page Write cycle time: 10 ms maximum - 1 to 128-byte Page Write operation
- Low-Power Dissipation: - 40 mA active current - 200 µA CMOS standby current
- Hardware and Software Data Protection
- DATA Polling for End of Write Detection
- High Reliability CMOS Technology: - Endurance: 10,000 or 100,000 cycles - Data retention: 10 years
- Single 5V ± 10% Supply
- CMOS and TTL Compatible Inputs and Outputs
- JEDEC® Approved Byte-Wide Pinout
