Datasheet Summary
64-Kbit (8K x 8) Industrial Parallel EEPROM with Page Write and Software Data Protection
Features
- Fast Read Access Time: 150 ns
- Automatic Page Write Operation:
- Internal address and data latches for 64 bytes
- Fast Write Cycle Time:
- Page Write cycle time: 2 ms or 10 ms maximum
- 1 to 64-byte Page Write operation
- Low-Power Dissipation:
- 40 mA active current
- 100 µA CMOS standby current
- Hardware and Software Data Protection
- DATA Polling and Toggle Bit for End of Write Detection
- High Reliability CMOS Technology:
- Endurance: 100,000 cycles
- Data retention: 10 years
- Single 5V ± 10% Supply
- CMOS and TTL patible Inputs and Outputs
- JEDEC® Approved Byte-Wide...
