Datasheet4U Logo Datasheet4U.com

AT28HC256 - High-Speed Paged Parallel EEPROM

Datasheet Summary

Description

3.

Description 6 3.1.

4.

Features

  • Fast Read Access Time: 70 ns.
  • Automatic Page Write Operation:.
  • Internal address and data latches for 64 bytes.
  • Internal control timer.
  • Fast Write Cycle Time:.
  • Page Write cycle time: 3 ms or 10 ms maximum.
  • 1 to 64-byte Page Write operation.
  • Low-Power Dissipation:.
  • 80 mA active current.
  • 3 mA standby current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Write Detection.

📥 Download Datasheet

Datasheet preview – AT28HC256

Datasheet Details

Part number AT28HC256
Manufacturer Microchip
File Size 1.01 MB
Description High-Speed Paged Parallel EEPROM
Datasheet download datasheet AT28HC256 Datasheet
Additional preview pages of the AT28HC256 datasheet.

📁 Similar Datasheet

  • AT28HC256 - 256K (32K x 8) High-speed Parallel EEPROM (ATMEL Corporation)
  • AT28HC256N - High-speed Parallel EEPROM (ATMEL Corporation)
  • AT28HC64B - 64K (8K x 8) High-speed Parallel EEPROM (ATMEL Corporation)
  • AT28HC64BF - 64K (8K x 8) High Speed Parallel EEPROM (ATMEL Corporation)
  • AT28BV16 - 16K 2K x 8 Battery-Voltage CMOS E2PROM (ATMEL Corporation)
  • AT28BV256 - 256K (32K x 8) Battery-Voltage Parallel EEPROMs (ATMEL Corporation)
  • AT28BV64 - 64K (8K x 8) Battery-Voltage Parallel EEPROMs (ATMEL Corporation)
  • AT28BV64B - 64K (8K x 8) Battery-Voltage Parallel EEPROM (ATMEL Corporation)
  • AT28C010 - 1-Megabit (128K x 8) Paged Parallel Military EEPROM (ATMEL Corporation)
  • AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM (ATMEL)
Other Datasheets by Microchip

Full PDF Text Transcription

Click to expand full text
256-Kbit (32,768 x 8) Industrial High‑Speed Parallel EEPROM AT28HC256 Features • Fast Read Access Time: 70 ns • Automatic Page Write Operation: – Internal address and data latches for 64 bytes – Internal control timer • Fast Write Cycle Time: – Page Write cycle time: 3 ms or 10 ms maximum – 1 to 64-byte Page Write operation • Low-Power Dissipation: – 80 mA active current – 3 mA standby current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology: – Endurance: 10,000 or 100,000 cycles – Data retention: 10 years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC® Approved Byte-Wide Pinout • Industrial Temperature Range • Green (RoHS-compliant) Packaging Option Only Packages • 32-Lead PLCC and 28-Lead S
Published: |