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AT28HC256 - High-Speed Paged Parallel EEPROM

General Description

3.

Description 6 3.1.

4.

Key Features

  • Fast Read Access Time: 70 ns.
  • Automatic Page Write Operation:.
  • Internal address and data latches for 64 bytes.
  • Internal control timer.
  • Fast Write Cycle Time:.
  • Page Write cycle time: 3 ms or 10 ms maximum.
  • 1 to 64-byte Page Write operation.
  • Low-Power Dissipation:.
  • 80 mA active current.
  • 3 mA standby current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Write Detection.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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256-Kbit (32,768 x 8) Industrial High‑Speed Parallel EEPROM AT28HC256 Features • Fast Read Access Time: 70 ns • Automatic Page Write Operation: – Internal address and data latches for 64 bytes – Internal control timer • Fast Write Cycle Time: – Page Write cycle time: 3 ms or 10 ms maximum – 1 to 64-byte Page Write operation • Low-Power Dissipation: – 80 mA active current – 3 mA standby current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology: – Endurance: 10,000 or 100,000 cycles – Data retention: 10 years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC® Approved Byte-Wide Pinout • Industrial Temperature Range • Green (RoHS-compliant) Packaging Option Only Packages • 32-Lead PLCC and 28-Lead S