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ATmega1281V - 8-bit Microcontroller

Download the ATmega1281V datasheet PDF. This datasheet also covers the ATmega640 variant, as both devices belong to the same 8-bit microcontroller family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Performance, Low Power AVR® 8-Bit Microcontroller.
  • Advanced RISC Architecture.
  • 135 Powerful Instructions.
  • Most Single Clock Cycle Execution.
  • 32 × 8 General Purpose Working Registers.
  • Fully Static Operation.
  • Up to 16 MIPS Throughput at 16MHz.
  • On-Chip 2-cycle Multiplier.
  • High Endurance Non-volatile Memory Segments.
  • 64K/128K/256KBytes of In-System Self-Programmable Flash.
  • 4Kbytes EEPROM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ATmega640-Microchip.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
ATMEGA1281V 8-bit Microcontroller ATMEL
ATMEGA1281 8-BIT Microcontroller ATMEL Corporation
ATMEGA128 8-bit Atmel Microcontroller ATMEL Corporation
ATMEGA1280 8-BIT Microcontroller ATMEL Corporation
ATMEGA1280V 8-bit Microcontroller ATMEL

Other Datasheets by Microchip Technology

Part Number Description
ATmega1281 8-bit Microcontroller
ATmega1280 8-bit Microcontroller
ATmega1280V 8-bit Microcontroller
ATmega1284 CMOS 8-bit microcontrollers
ATmega1284P CMOS 8-bit microcontrollers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ATmega640/V-1280/V-1281/V-2560/V-2561/V 8-bit Microcontroller with 16/32/64KB In-System Programmable Flash Features • High Performance, Low Power AVR® 8-Bit Microcontroller • Advanced RISC Architecture – 135 Powerful Instructions – Most Single Clock Cycle Execution – 32 × 8 General Purpose Working Registers – Fully Static Operation – Up to 16 MIPS Throughput at 16MHz – On-Chip 2-cycle Multiplier • High Endurance Non-volatile Memory Segments – 64K/128K/256KBytes of In-System Self-Programmable Flash – 4Kbytes EEPROM – 8Kbytes Internal SRAM – Write/Erase Cycles:10,000 Flash/100,000 EEPROM – Data retention: 20 years at 85C/ 100 years at 25C – Optional Boot Code Section with Independent Lock Bits • In-System Programming by On-chip Boot Program • True Read-While-Write Operation – Programming