Microchip Technology DN1509
This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.| Part No. | DN1509 |
|---|---|
| Datasheet | DN1509 Download |
| Manufacturer |  Microchip Technology |
| Description | Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● High-input impedance● Low-input capacitance
● Fast switching speeds
● Low on-resistance
● Free from secondary breakdown
● Low input and output leakages
APPLICATIONS
● Normally-on switches● Battery operated systems
● Converters
● Linear amplifiers
● Constant current sources
● Telecom
DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 2015 Microchip Technology Inc. DS20005403B-page 1 DN1509 Package Type SOURCE GATE N/C DRAIN N/C 5-lead SOT-23 See Table 2-1 for pin information DRAIN SOURCE DRAIN GATE TO-243AA (SOT-89) DS20005403B-page 2 2015 Microchip Technology Inc. DN1509 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
† Drain-to-source voltage..............................................................................................................................
