Click to expand full text
DN2450
N-Channel, Depletion-Mode, Vertical DMOS FET
Features
• High-input impedance • Low-input capacitance • Fast switching speeds • Low on-resistance • Free from secondary breakdown • Low input and output leakages
Applications
• Normally-on switches • Battery operated systems • Voltage to current converters • Constant current sources • Current and voltage limiters
Description
This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.
DN2450 Datasheet
