Microchip Technology DN2450
This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.| Part No. | DN2450 |
|---|---|
| Datasheet | DN2450 Download |
| Manufacturer |  Microchip Technology |
| Description | Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● High-input impedance● Low-input capacitance
● Fast switching speeds
● Low on-resistance
● Free from secondary breakdown
● Low input and output leakages
APPLICATIONS
● Normally-on switches● Battery operated systems
● Voltage to current converters
● Constant current sources
● Current and voltage limiters
DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally su
