This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process.
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DN2450 N-Channel, Depletion-Mode, Vertical DMOS FET Features • High-input impedance • Low-input capacitance • Fast switching speeds • Low on-resistance • Free from second...
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citance • Fast switching speeds • Low on-resistance • Free from secondary breakdown • Low input and output leakages Applications • Normally-on switches • Battery operated systems • Voltage to current converters • Constant current sources • Current and voltage limiters Description This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature c
DN2450 Datasheet
