Microchip Technology DN2530
The DN2530 is a low-threshold, depletion-mode, normally-on transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.| Part No. | DN2530 |
|---|---|
| Datasheet | DN2530 Download |
| Manufacturer |  Microchip Technology |
| Description | Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● High-input impedance● Low-input capacitance
● Fast switching speeds
● Low on-resistance
● Free from secondary breakdown
● Low input and output leakage
APPLICATIONS
● Normally-on switches● Solid state relays
● Converters
● Linear amplifiers
● Constant current sources
● Power supply circuits
● Telecom
DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where high breakdown-voltage, high-input impedance, low-input capacitance, and fast switching speeds are desired. Package Types SOURCE DRAIN GATE TO-92 See Table 2-1 for pin information DRAIN SOURCE DRAIN GATE TO-243AA (SOT-89) 2016 Microchip Technology Inc. DS20005451A-page 1 DN2530 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
† Drain-to-source voltage .........................................................................................................................................
