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GMICP2731-10 - 9W GaN PA MMIC

Features

  • Functional Block Diagram.
  • Frequency range: 27.5.
  • 31 GHz.
  • Pout: 39.5 dBm (Pin = 24 dBm) VG VD VG VD VG VD.
  • PAE: 22% (Pin = 24 dBm) 50Ω.
  • Small Signal Gain: 22 dB (28 GHz).
  • Return Loss: 15 dB.
  • Drain Bias 24V, IDQ = 112 mA.
  • 224 mA RF IN.
  • Technology: GaN on SiC.
  • Lead-free and RoHS compliant.
  • Dimensions: 3.025 mm × 3.405 mm × 0.10 mm.

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GMICP2731-10 27.5 – 31 GHz 9W GaN PA MMIC Product Overview Microchip’s GMICP2731-10 is a Ka Band MMIC power amplifier fabricated using GaN SiC technology. It achieves 39.5 dBm saturated output power from 27.5 – 31 GHz, with 22% PAE and 22 dB small signal gain. The balanced topology provides excellent broadband input and output match to 50Ω and DC blocking capacitors ensure simple integration. Excellent linearity characteristics make GMICP2731-10 well suited to applications in Satellite Communications. The die are 100% DC and RF tested on wafer ensuring compliance to the electrical specifications. Key Features Functional Block Diagram • Frequency range: 27.5 – 31 GHz • Pout: 39.
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