Microchip Technology ICP1240P
ICP1240P is a 3 stage MMIC power amplifier in package form, fabricated using GaN on SiC technology. ICP1240P is well suited to a variety of commercial, aerospace and defense applications. ICP1240P operates from 6-18GHz with 40 dBm output power, >20% PAE and 23dB typical small signal gain.| Part No. | ICP1240P |
|---|---|
| Datasheet | ICP1240P Download |
| Manufacturer |  Microchip Technology |
| Description | 6-18GHz 10W GaN PA MMIC |
| Buy | Stock & Price |
FEATURES
● Frequency Range: 6-18GHz● Pout: 40 dBm @ 24dBm Pin VG
● Typical PAE: 20 %
● Small Signal Gain: 23dB
● Bias: VD=24V IDQ=280mA, Typical Vg=-1.8V
● Technology: GaN on SiC
● Lead-free and RoHS compliant
● Package Dimensions 10mm x 20mm
APPLICATIONS
● Test and Measurement● Aerospace & Defense RF IN Functional Block Diagram VD VG VD VG VD RF OUT
ELECTRICAL SPECIFICATIONS
| Test Conditions unless otherwise stated | VD=24V, ID=280mA, TA=25 oC, CW Min Typ Max Units Frequency 6 18 GHz Output Power @ Psat PAE @ Psat Pin=24dBm Pin=24dBm 40 dBm 22 % Small Signal Gain 23 dB Input Return Loss 15 dB Output Return Loss 7 dB © 2023 Microchip Technology Inc. and its subsidiaries Engineering Datasheet Rev B Page 1 6-18GHz 10W GaN PA MMIC ICP1240PELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Thermal and Reliability Drain Voltage (VD) Gate Voltage Range (VG) Gate Current (IG) Drain Current (CW) TA=25ºC Power Dissipation (CW) TA=25ºC Power Dissipation (CW) TA=85ºC CW Input Power 50ohm, TA=...
