JANSR2N7587U3 Datasheet | Microchip Technology

Preliminary 100V N-Channel Radiation-Hardened MOSFET MRH10N22U3SR/JANSR2N7587U3 Product Overview MRH10N22U3SR 150°C, 100V, 19A, N-CHANNEL 2N7587 100V 22A B5498-1 Microchip’s new M6™ technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Ionizing Dose (TID) and Single Event environments (SEE). M6™ performs in extreme-environment applications and remains within specification in radiation environments up to 300 Krad TID. Figure 1. MRH10N22U3SR-2N7587 Features - Low...