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LND01 - Lateral N-Channel Depletion-Mode MOSFET

General Description

The LND01 is a low-threshold, Depletion-mode (normally-on) transistor that uses an advanced lateral DMOS structure and a well-proven silicon gate manufacturing process.

Key Features

  • Bi-directional.
  • Low On-resistance.
  • Low Input Capacitance.
  • Fast Switching Speeds.
  • High Input Impedance and High Gain.
  • Low Power Drive Requirement.
  • Ease of Paralleling.

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Part Number Description Manufacturer
LND01 Lateral N-Channel Depletion-Mode MOSFET Supertex

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LND01 Lateral N-Channel Depletion-Mode MOSFET Features • Bi-directional • Low On-resistance • Low Input Capacitance • Fast Switching Speeds • High Input Impedance and High Gain • Low Power Drive Requirement • Ease of Paralleling Applications • Normally-on Switches • Solid-state Relays • Converters • Constant Current Sources • Analog Switches General Description The LND01 is a low-threshold, Depletion-mode (normally-on) transistor that uses an advanced lateral DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices.