LND01 Overview
The LND01 is a low-threshold, Depletion-mode (normally-on) transistor that uses an advanced lateral DMOS structure and a well-proven silicon gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free...
LND01 Key Features
- Bi-directional
- Low On-resistance
- Low Input Capacitance
- Fast Switching Speeds
- High Input Impedance and High Gain
- Low Power Drive Requirement
- Ease of Paralleling
