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LND01 Datasheet PDF

Microchip Technology LND01

The LND01 is a low-threshold, Depletion-mode (normally-on) transistor that uses an advanced lateral DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices. The body of the transistor is connected to the gate pin.
Part No. LND01
Datasheet LND01 Download
Manufacturer
Microchip Technology
Description Lateral N-Channel Depletion-Mode MOSFET
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LND01 datasheet page 1 preview

FEATURES

● Bi-directional
● Low On-resistance
● Low Input Capacitance
● Fast Switching Speeds
● High Input Impedance and High Gain
● Low Power Drive Requirement
● Ease of Paralleling

APPLICATIONS

● Normally-on Switches
● Solid-state Relays
● Converters
● Constant Current Sources
● Analog Switches

GENERAL DESCRIPTION

Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. The channel is therefore being pinched off by both the gate and body
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