Microchip Technology MMA155PP5
MMA155PP5 is a gallium arsenide (GaAs) monolithic microwaveintegrated circuit (MMIC) pseudomorphic highelectron - mobility tra nsistor (pHEMT) distributed a mplifier tha t opera tes between DC a nd 22 GHz. It is idea l for test instrumentation and wide-band military and space applications. The amplifier provides a gain of 15 dB, 3.5 dB noise figure, a nd 32 dBm of output power a t 3 dB ga in compression with a nomina l bia s condition of 640 mA from a 13V supply.| Part No. | MMA155PP5 |
|---|---|
| Datasheet | MMA155PP5 Download |
| Manufacturer |  Microchip Technology |
| Description | DC-22GHz 32dBm Distributed Power Amplifier |
| Buy | Stock & Price |
FEATURES
● Broadband performance: DC to 22 GHz● High Gain: 15 dB
● Positive Gain Slope
● High Psat: 33 dBm at 12 GHz
● Supply: 13 V at 640 mA
● Integrated Temperature Compensated Power Detector
● 50 Ohm matched Input/Output
● Molded QFN 5x5mm Package
● Passivated space-qualified process listed on EPPL007-38 Functional Block Diagram
APPLICATIONS
● Test and measurement instrumentation● Military and space, SATCOM, Phased Array
● EW, ECCM, RADAR
● Wireless infrastructure
● Wideband microwave radios Performance Overview Pa ra m eter Opera tiona l frequency ra nge Ga in Psa t IM3 (20dBm per tone) Current @ +13V Supply Typ. DC-22 15 +33 -40 640 Units GHz dB dBm dBc mA Export Classification: EAR-99 Gain, NF, Psat, IM3(-) 50 45 40 35 30 25 20 15 10 5 0 0 Gain, dB NF, dB Psat, dBm IM3, (-)dBc 5 10 15 20 25 Frequency, GHz Figure 1 - Featured Performances © 20233 Microchip Technology Inc. [Typeher] Rev.1.22 Page 1 of 21 Electrica l Specifica tions MMA155PP5 Table of Contents 1.
ELECTRICAL SPECIFICATIONS
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