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Preliminary 100V N-Channel Radiation-Hardened MOSFET
MRH10N22U3SR/JANSR2N7587U3
Product Overview
MRH10N22U3SR 150°C, 100V, 19A, N-CHANNEL 2N7587 100V 22A B5498-1 Microchip’s new M6™ technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Ionizing Dose (TID) and Single Event environments (SEE). M6™ performs in extreme-environment applications and remains within specification in radiation environments up to 300 Krad TID. Figure 1.
MRH10N22U3SR Datasheet
