Datasheet Summary
700V, 15 mΩ N-Channel mSiC™ MOSFET
Product Overview
700V, 15 mΩ typical at 20 VGS, 18 mΩ typical at 18 VGS, Silicon Carbide (SiC) N-Channel MOSFET, TO-247.
Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS pliant Benefits
- High efficiency to enable lighter and more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode
- Lower system cost of ownership Applications
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