MSC090SDA330B2 Overview
MSC090SDA330B2 3300 V, 90 A Silicon Carbide Schottky Barrier Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SDA330B2 device is a 3300 V, 90 A SiC SBD in a two-lead T-MAX package.
MSC090SDA330B2 Key Features
- No reverse recovery
- Low forward voltage
- Low leakage current
- RoHS pliant
- High switching frequency
- Low switching losses
- Low noise (EMI) switching
- Higher reliability systems
- Increased system power density