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MSC090SDA330B2 - 90A Silicon Carbide Schottky Barrier Diode

Key Features

  • The following are key features of the MSC090SDA330B2 device:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • RoHS compliant Benefits The following are benefits of the MSC090SDA330B2 device:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.
  • Increased system power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC090SDA330B2 3300 V, 90 A Silicon Carbide Schottky Barrier Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SDA330B2 device is a 3300 V, 90 A SiC SBD in a two-lead T-MAX package.