MSC180SMA120B Overview
MSC180SMA120B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC180SMA120B device is a 1200 V, 180 mΩ SiC MOSFET in a TO-247 package.
MSC180SMA120B Key Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS pliant
- High efficiency to enable lighter, more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode