Microchip Technology MSC360SMA120B
The MSC360SMA120B device is a 1200 V, 360 mΩ SiC MOSFET in a TO-247 package. Features The following are key features of the MSC360SMA120B device: • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche...| Part No. | MSC360SMA120B |
|---|---|
| Datasheet | MSC360SMA120B Download |
| Manufacturer |  Microchip Technology |
| Description | Silicon Carbide N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
The following are key features of the MSC360SMA120B device:● Low capacitances and low gate charge
● Fast switching speed due to low internal gate resistance (ESR)
● Stable operation at high junction temperature, TJ(max) = 175 °C
● Fast and reliable body diode
● Superior avalanche ruggedness
● RoHS compliant Benefits The following are benefits of the MSC360SMA120B device:
● High efficiency to enable lighter, more compact system
● Simple to drive and easy to parallel
● Improved thermal capabilities and lower switching losses
● Eliminates the need for external freewheeling diode
● Lower system cost of ownership
APPLICATIONS
The MSC360SMA120B device is designed for the following applications:● PV inverter, converter, and industrial motor drives
● Smart grid transmission and distribution
● Induction heating and welding
● H/EV powertrain and EV charger
● Power supply and distribution © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00003990B-page 1 MSC360SMA120B Device Specifications 1.
