MSC400SMA330B4 Overview
MSC400SMA330B4 3300 V, 400 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC400SMA330B4 device is a 3300 V, 400 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.
MSC400SMA330B4 Key Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 150 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS pliant
- High efficiency to enable lighter, more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode