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MSCGLQ25X120CRTBL3NG - Power Module

Features

  • The MSCGLQ25X120CRTBL3NG device has the following key features:.
  • High-Speed IGBT 4.
  • Low voltage drop.
  • Low leakage current.
  • Low switching losses.
  • Silicon Carbide (SiC) Schottky Diode.
  • Zero reverse recovery.
  • Zero forward recovery.
  • Temperature independent switching behavior.
  • Positive temperature coefficient on VF.
  • Very low stray inductance.
  • Ultra low weight and profile.
  • Kelvin source for easy.

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Full PDF Text Transcription

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Three-Phase Bridge High-Speed IGBT 4 Power Module MSCGLQ25X120CRTBL3NG Product Overview The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. The following figures show the electrical diagram and pinout location of the device. Figure 1. Electrical Diagram Figure 2. Pinout Location Note: All ratings are at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. Data Sheet © 2023 Microchip Technology Inc.
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