MSCGLQ25X120CRTBL3NG Description
Three-Phase Bridge High-Speed IGBT 4 Power Module MSCGLQ25X120CRTBL3NG Product Overview The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. The following figures show the electrical diagram and pinout location of the device. Electrical Diagram Figure.
MSCGLQ25X120CRTBL3NG Key Features
- High-Speed IGBT 4
- Low voltage drop
- Low leakage current
- Low switching losses
- Silicon Carbide (SiC) Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
- Very low stray inductance