Microchip Technology MSCSM120AM027D3AG
The MSCSM120AM027D3AG device is a full bridge 1200V, 733A phase leg silicon carbide (SiC) MOSFET power module. and its subsidiaries Data Sheet DS00004633A-page 1 MSCSM120AM027D3AG Features The following are the key features of the MSCSM120AM027D3AG device: • SiC Power MOSFET – Low RDS(on) – High temperature performance • Kelvin source for easy drive • High level of integration • M6 power connectors •...MSCSM120AM027D3AG Specifications
- Drain-Source Voltage : 1.2kV
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| Part No. | MSCSM120AM027D3AG |
|---|---|
| Datasheet | MSCSM120AM027D3AG Download |
| Manufacturer |  Microchip Technology |
| Description | SiC MOSFET |
| Buy | Stock & Price |
FEATURES
The following are the key features of the MSCSM120AM027D3AG device:● SiC Power MOSFET – Low RDS(on) – High temperature performance
● Kelvin source for easy drive
● High level of integration
● M6 power connectors
● Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM120AM027D3AG device:
● High efficiency converter
● Stable temperature behavior
● Direct mounting to heatsink (isolated package)
● Low junction-to-case thermal resistance
● RoHS compliant Application The MSCSM120AM027D3AG device is designed for the following applications:
● Welding converters
● Switched mode power supplies
● Uninterruptible power supplies
● EV motor and traction drive © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004633A-page 2 MSCSM120AM027D3AG
ELECTRICAL SPECIFICATIONS
1.ELECTRICAL SPECIFICATIONS
This section provides the electrical specifications of the MSCSM120AM027D3AG device. 1.1 SiC MOSFET Characteristics (Per SiC MOSFET) The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM120AM027D3AG device.
