Download MSCSM170HRM451AG Datasheet PDF
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MSCSM170HRM451AG Description

MSCSM170HRM451AG T-Type SiC MOSFET Power Module Product Overview The MSCSM170HRM451AG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg : 1700V, 64A and a dual mon source 1200V, 89A. The following figures show the electrical and pinout location diagrams of the device.

MSCSM170HRM451AG Key Features

  • SiC Power MOSFET
  • High speed switching
  • Low RDS(on)
  • Ultra low loss
  • Very low stray inductance
  • AlN substrate for improved thermal performance
  • Outstanding performance at high-frequency operation
  • High-power and high-efficiency rectifiers and converters
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance