Microchip Technology MSCSM170HRM451AG
The MSCSM170HRM451AG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg : 1700V, 64A and a dual common source 1200V, 89A. and its subsidiaries Data Sheet DS00004929A-page 1 MSCSM170HRM451AG Features The MSCSM170HRM451AG device has the following features: • SiC Power MOSFET – High speed switching – Low RDS(on) – Ultra low loss • Very low stray inductance • AlN substrate for improved thermal performance Benefits The...FEATURES
The MSCSM170HRM451AG device has the following features:● SiC Power MOSFET – High speed switching – Low RDS(on) – Ultra low loss
● Very low stray inductance
● AlN substrate for improved thermal performance Benefits The MSCSM170HRM451AG device has the following benefits:
● Outstanding performance at high-frequency operation
● High-power and high-efficiency rectifiers and converters
● Direct mounting to heatsink (isolated package)
● Low junction-to-case thermal resistance
● Solderable terminals both for power and signal for easy PCB mounting
● Low profile
● RoHS compliant
APPLICATIONS
The MSCSM170HRM451AG device has the following applications:● Solar inverter
● Three level inverter
● Uninterruptible power supplies © 2023 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004929A-page 2 MSCSM170HRM451AG
ELECTRICAL SPECIFICATIONS
1.ELECTRICAL SPECIFICATIONS
The following sections describe the electrical specifications of the MSCSM170HRM451AG device. 1.1 Q1 and Q4 1700...