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MSCSM170HRM451AG - T-Type SiC MOSFET Power Module

Features

  • The MSCSM170HRM451AG device has the following features:.
  • SiC Power MOSFET.
  • High speed switching.
  • Low RDS(on).
  • Ultra low loss.
  • Very low stray inductance.
  • AlN substrate for improved thermal performance Benefits The MSCSM170HRM451AG device has the following benefits:.
  • Outstanding performance at high-frequency operation.
  • High-power and high-efficiency rectifiers and converters.
  • Direct mounting to heatsink (isolated pack.

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MSCSM170HRM451AG T-Type SiC MOSFET Power Module Product Overview The MSCSM170HRM451AG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg : 1700V, 64A and a dual common source 1200V, 89A. : The following figures show the electrical and pinout location diagrams of the device. Figure 1. Electrical Diagram Figure 2. Pinout Location Diagram Notes:  • Pins 4/5; 10/11; • All ratings at TJ =7/28As5mh°luoCls,rmttubeneudlelssthtsiooporgtlteheedetrihtwonegipsereuth:steps4re./ac5infied;d1.o0u/t1p1u;ts7m/8ust be CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2023 Microchip Technology Inc.
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