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SST26WF016BA - 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory

Download the SST26WF016BA datasheet PDF. This datasheet also covers the SST26WF016B variant, as both devices belong to the same 1.8v 16 mbit serial quad i/o (sqi) flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Single Voltage Read and Write Operations - 1.65-1.95V.
  • Serial Interface Architecture - Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Proto- col.
  • High Speed Clock Frequency - 104 MHz max.
  • Burst Modes - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around.
  • Superior Reliability - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retenti.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SST26WF016B-Microchip.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Microchip Technology

Part Number Description
SST26WF016B 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26WF040B 1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory
SST26WF040BA 1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory
SST26WF080B 1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory
SST26WF080BA 1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SST26WF016B/ SST26WF016BA 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltage Read and Write Operations - 1.65-1.95V • Serial Interface Architecture - Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Proto- col • High Speed Clock Frequency - 104 MHz max • Burst Modes - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around • Superior Reliability - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention • Low Power Consumption: - Active Read current: 15 mA (typical @ 104 MHz) - Standby current: 10 μA (typical) - Deep Power-Down current: 2.