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SST26WF040B - 1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory

General Description

The Serial Quad I/O™ (SQI™) family of flash-memory devices

Key Features

  • Single Voltage Read and Write Operations - 1.65-1.95V.
  • Serial Interface Architecture - Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol.
  • High Speed Clock Frequency - 104 MHz max.
  • Burst Modes - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around.
  • Superior Reliability - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention.

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Other Datasheets by Microchip Technology

Part Number Description
SST26WF040BA 1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory
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Full PDF Text Transcription (Reference)

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SST26WF040B/040BA SST26WF080B/080BA 1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltage Read and Write Operations - 1.65-1.95V • Serial Interface Architecture - Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol • High Speed Clock Frequency - 104 MHz max • Burst Modes - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around • Superior Reliability - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention • Low Power Consumption: - Active Read current: 15 mA (typical @ 104 MHz) - Standby current: 10 μA (typical) - Deep Power-Down current: 1.