SST39VF1602C Overview
The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39VF1601C / SST39VF1602C write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.
SST39VF1602C Key Features
- Organized as 1M x16: SST39VF1601C/1602C
- Single Voltage Read and Write Operations
- 2.7-3.6V
- Superior Reliability
- Endurance: 100,000 Cycles (Typical)
- Greater than 100 years Data Retention
- Low Power Consumption (typical values at 5 MHz)
- Active Current: 9 mA (typical)
- Standby Current: 3 µA (typical)
- Auto Low Power Mode: 3 µA (typical)