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TC6215 - Dual MOSFET

General Description

The TC6215 consists of high-voltage, low-threshold N-channel and P-channel MOSFETs in an 8-lead SOIC (TG) package.

Key Features

  • Back-to-Back, Gate-Source Zener Diodes.
  • Guaranteed RDS(ON) at 4V Gate Drive.
  • Low Threshold.
  • Low On-resistance.
  • Independent N-channel and P-channel.
  • Electrically Isolated N-channel and P-channel.
  • Low Input Capacitance.
  • Fast Switching Speeds.
  • Free from Secondary Breakdowns.
  • Low Input and Output Leakage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC6215 N-Channel and P-Channel Enhancement-Mode Dual MOSFETs Features • Back-to-Back, Gate-Source Zener Diodes • Guaranteed RDS(ON) at 4V Gate Drive • Low Threshold • Low On-resistance • Independent N-channel and P-channel • Electrically Isolated N-channel and P-channel • Low Input Capacitance • Fast Switching Speeds • Free from Secondary Breakdowns • Low Input and Output Leakage Applications • High-voltage Pulsers • Amplifiers • Buffers • Piezoelectric Transducer Drivers • General Purpose Line Drivers • Logic-level Interfaces General Description The TC6215 consists of high-voltage, low-threshold N-channel and P-channel MOSFETs in an 8-lead SOIC (TG) package.