TC8020
Features
- High-voltage Vertical DMOS Technology
- Integrated Gate-to-Source Resistor
- Integrated Gate-to-Source Zener Diode
- +/- 3.5A at 50V Typical Peak Output
- Low Threshold, Low On-resistance
- Low Input and Output Capacitance
- Fast Switching Speeds
- Electrically Isolated N-channel and P-channel
MOSFET Pairs
Applications
- High-voltage Pulsers
- Amplifiers
- Buffers
- Piezoelectric Transducer Drivers
- General Purpose Line Drivers
- Logic-level Interfaces
General Description
The TC8020 consists of six pairs of high-voltage, low-threshold N-channel and P-channel MOSFETs in a 56-lead VQFN package. All MOSFETs have integrated the output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. The plimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This...
