Microchip Technology TC8020
The TC8020 consists of six pairs of high-voltage, low-threshold N-channel and P-channel MOSFETs in a 56-lead VQFN package. The complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | TC8020 |
|---|---|
| Datasheet | TC8020 Download |
| Manufacturer |  Microchip Technology |
| Description | Dual-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● High-voltage Vertical DMOS Technology● Integrated Gate-to-Source Resistor
● Integrated Gate-to-Source Zener Diode
● +/–3.5A at 50V Typical Peak Output
● Low Threshold, Low On-resistance
● Low Input and Output Capacitance
● Fast Switching Speeds
● Electrically Isolated N-channel and P-channel MOSFET Pairs
APPLICATIONS
● High-voltage Pulsers● Amplifiers
● Buffers
● Piezoelectric Transducer Drivers
● General Purpose Line Drivers
● Logic-level Interfaces
GENERAL DESCRIPTION
All MOSFETs have integrated the output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired.
