TN0106 Overview
The TN0106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and...
TN0106 Key Features
- 2V Maximum Low Threshold
- High Input Impedance
- 50 pF Typical Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
TN0106 Applications
- Logic-Level Interfaces (Ideal for TTL and CMOS)
