Microchip Technology TN2124
The TN2124 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.| Part No. | TN2124 |
|---|---|
| Datasheet | TN2124 Download |
| Manufacturer |  Microchip Technology |
| Description | N-Channel Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● Free from Secondary Breakdown● Low Power Drive Requirement
● Ease of Paralleling
● Low CISS and Fast Switching Speeds
● Excellent Thermal Stability
● Integral Source-Drain Diode
● High Input Impedance and High Gain
APPLICATIONS
● Logic-Level Interfaces (Ideal for TTL and CMOS)● Solid-State Relays
● Battery-Operated Systems
● Photovoltaic Drives
● Analog Switches
● General Purpose Line Drivers
● Telecommunication Switches
GENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type 3-lead SOT-23 (Top view) DRAIN See Table 3-1 for pin information. SOURCE GATE 2018 Microchip Technology Inc. DS20005698A-page 1 TN2124 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
† Drain-to-Source Voltage ................................................................
