Microchip Technology TN2130
The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | TN2130 |
|---|---|
| Datasheet | TN2130 Download |
| Manufacturer |  Microchip Technology |
| Description | N-Channel Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● Free from Secondary Breakdown● Low Power Drive Requirement
● Ease of Paralleling
● Low CISS and Fast Switching Speeds
● Excellent Thermal Stability
● Integral Source-Drain Diode
● High Input Impedance and High Gain
APPLICATIONS
● Logic-Level Interfaces (Ideal for TTL and CMOS)● Solid-State Relays
● Battery-Operated Systems
● Photovoltaic Drives
● Analog Switches
● General Purpose Line Drivers
● Telecommunication Switches
GENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Type 3-lead SOT-23 (Top view) DRAIN SOURCE GATE See Table 3-1 for pin information. 2019-2023 Microchip Technology Inc. and its subsidiaries 6-lead DFN (Top view)...
