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TP0620 - P-Channel Vertical DMOS FET

General Description

The TP0620 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Key Features

  • 2.4V Maximum Low Threshold.
  • High Input Impedance.
  • Low-Input Capacitance (85 pF Typical).
  • Fast Switching Speeds.
  • Low On-Resistance.
  • Free from Secondary Breakdown.
  • Low Input and Output Leakage.

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TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features • –2.4V Maximum Low Threshold • High Input Impedance • Low-Input Capacitance (85 pF Typical) • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TP0620 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.