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TP5322 Datasheet P-Channel Vertical DMOS FET

Manufacturer: Microchip Technology

Overview: TP5322 P-Channel Enhancement-Mode Vertical DMOS FET.

General Description

The TP5322 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Key Features

  • 2.4V Maximum Low Threshold.
  • High Input Impedance.
  • 110 pF Maximum Low Input Capacitance.
  • Fast Switching Speeds.
  • Low On-Resistance.
  • Free from Secondary Breakdown.
  • Low Input and Output Leakage.