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TP5335 Datasheet P-Channel DMOS FET

Manufacturer: Microchip Technology

Overview: TP5335 P-Channel Enhancement-Mode Vertical DMOS FET.

General Description

The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.

The characteristic of all MOS structures is that this device is free from thermal runaway and thermally induced secondary breakdown.

Key Features

  • High Input Impedance and High Gain.
  • Low-Power Drive Requirement.
  • Ease of Paralleling.
  • Low CISS and Fast Switching Speeds.
  • Excellent Thermal Stability.
  • Integral Source-Drain Diode.
  • Free from Secondary Breakdown.