Microchip Technology VN2210
VN2210 is an Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | VN2210 |
|---|---|
| Datasheet | VN2210 Download |
| Manufacturer |  Microchip Technology |
| Description | N-Channel Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● Free from Secondary Breakdown● Low Power Drive Requirement
● Ease of Paralleling
● Low CISS and Fast Switching Speeds
● Excellent Thermal Stability
● Integral Source-drain Diode
● High Input Impedance and High Gain
APPLICATIONS
● Motor Controls● Converters
● Amplifiers
● Switches
● Power Supply Circuits
● Drivers (Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.)
GENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Types TO-39 SOURCE GATE DRAIN TO-92 SOURCE DRAIN GATE 2016 Microchip Technology Inc. DS20005559A-page 1 VN2210 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
† Drain-to-source Voltage ........................................................................................................................................
