VN2210
Description
VN2210 is an Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices.
Key Features
- Free from Secondary Breakdown
- Low Power Drive Requirement
- Ease of Paralleling
- Low CISS and Fast Switching Speeds
- Excellent Thermal Stability
- Integral Source-drain Diode
- High Input Impedance and High Gain
