Microchip Technology VP0808
The VP0808 Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | VP0808 |
|---|---|
| Datasheet | VP0808 Download |
| Manufacturer |  Microchip Technology |
| Description | P-Channel Enhancement-Mode Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● Free from Secondary Breakdown● Low Power Drive Requirement
● Ease of Paralleling
● Low CISS and Fast Switching Speeds
● Excellent Thermal Stability
● Integral Source-Drain Diode
● High Input Impedance and High Gain
APPLICATIONS
● Motor Controls● Converters
● Amplifiers
● Switches
● Power Supply Circuits
● Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)
GENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Type 3-lead TO-92 (Top view) See Table 2-1 for pin information. SOURCE DRAIN GATE 2022 Microchip Technology Inc. and its subsidiaries DS20006004A-page 1 VP0808 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
† Drain-to-Source Voltage .................................................................................................
