VP2450 Description
The VP2450 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all...
VP2450 Key Features
- Free from Secondary Breakdown
- Low Power Drive Requirement
- Ease of Paralleling
- Low CISS and Fast Switching Speeds
- High Input Impedance and High Gain
- Excellent Thermal Stability
- Integral Source-drain Diode