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VP2450 - P-Channel Enhancement-Mode Vertical DMOS FET

Description

The VP2450 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process.

Features

  • Free from Secondary Breakdown.
  • Low Power Drive Requirement.
  • Ease of Paralleling.
  • Low CISS and Fast Switching Speeds.
  • High Input Impedance and High Gain.
  • Excellent Thermal Stability.
  • Integral Source-drain Diode.

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Datasheet preview – VP2450

Datasheet Details

Part number VP2450
Manufacturer Microchip
File Size 427.31 KB
Description P-Channel Enhancement-Mode Vertical DMOS FET
Datasheet download datasheet VP2450 Datasheet
Additional preview pages of the VP2450 datasheet.

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    Full PDF Text Transcription

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    VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • High Input Impedance and High Gain • Excellent Thermal Stability • Integral Source-drain Diode Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers: Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc. General Description The VP2450 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process.
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