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MT8VDDT6464HD - (MT8VDDTxx64HD) 200-Pin DDR Sdram Sodimms

Download the MT8VDDT6464HD datasheet PDF. This datasheet also covers the MT8VDDT1664HD variant, as both devices belong to the same (mt8vddtxx64hd) 200-pin ddr sdram sodimms family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL WE#, CAS#, RAS# TYPE DESCRIPTION Pin numbers may not correlate with symbols.

Input Command Inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered.

Key Features

  • 200-pin, small-outline, dual in-line memory module (SODIMM).
  • Fast data transfer rates PC1600, PC2100, or PC2700 www. DataSheet4U. com.
  • Utilizes 200 MT/s, 266 MT/s, and 333MT/s DDR SDRAM components.
  • 128MB (16 Meg x 64), 256MB (32 Meg x 64), or 512MB (64 Meg x 64).
  • VDD = VDDQ = +2.5V.
  • VDDSPD = +2.3V to +3.6V.
  • 2.5V I/O (SSTL_2 compatible).
  • Commands entered on each positive CK edge.
  • DQS edge-aligned with data for READs;.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT8VDDT1664HD_MicronSemiconductorProducts.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT8VDDT6464HD
Manufacturer Micron Semiconductor Products
File Size 605.17 KB
Description (MT8VDDTxx64HD) 200-Pin DDR Sdram Sodimms
Datasheet download datasheet MT8VDDT6464HD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
128MB, 256MB, 512MB (x64) 200-PIN DDR SODIMM SMALL-OUTLINE DDR SDRAM MODULE Features • 200-pin, small-outline, dual in-line memory module (SODIMM) • Fast data transfer rates PC1600, PC2100, or PC2700 www.DataSheet4U.com • Utilizes 200 MT/s, 266 MT/s, and 333MT/s DDR SDRAM components • 128MB (16 Meg x 64), 256MB (32 Meg x 64), or 512MB (64 Meg x 64) • VDD = VDDQ = +2.5V • VDDSPD = +2.3V to +3.6V • 2.5V I/O (SSTL_2 compatible) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Bidirectional data strobe (DQS) transmitted/received with data—i.e.