APT19F100J Datasheet | Micron Semiconductor

FEATURES - Fast switching with low EMI - Low trr for high reliability - Ultra low Crss for improved noise immunity - Low gate charge - Avalanche energy rated - Ro HS pliant TYPICAL APPLICATIONS - ZVS phase shifted and other full full bridge - Half bridge - PFC and other boost converter - Buck converter - Single and two switch forward - Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Ratings 19 12 120 ±30 1875 16 Unit V m J A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60h Hz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 10 1.1 0.15 150 Min Typ Max 460 0.27 Unit W °C/W °C V 9-2006 050-8080 Rev A oz g in- lbf N- m Torque Terminals and Mounting Screws. Microsemi Website - http://.microsemi. Data Sheet 4 U . Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 16A APT29F100B2_L Typ 1.15 Max Unit V V/°C Ω V m V/°C µA n A Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance Min...