MT45W2ML16PFA - (MT45WxMx16PFA) Async Cellularram Memory

Product Overview

Micron Semiconductor

Part number	MT45W2ML16PFA
Manufacturer	MicrON Semiconductor
File Size	323.74 KB
Description	(MT45WxMx16PFA) Async Cellularram Memory
Datasheet	MT45W2ML16PFA Datasheet
Additional preview pages of the MT45W2ML16PFA datasheet.

See Figure 18 on page 22 for the 48-ball mechanical drawing.

A part marking guide for the FBGA devices can be found on Micron’s Web site: www.micron.com/numberguide.

Asynchronous and Page Mode interface.
Random Access Time: 70ns, 85ns.
Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns Intrapage read access: 20ns, 25ns.
VCC, VCCQ Voltages 1.70V.
1.95V VCC 1.70V.
2.25V VCCQ (Option W) 2.30V.
2.70V VCCQ (Option V) 2.70V.
3.30V VCCQ (Option L).
Low Power Consumption Asynchronous READ < 25mA Intrapage READ < 15mA Standby: 90µA (32Mb), 100µA (64Mb) Deep Power-Dow.

📁 Similar Datasheet

MT45W8MW16BGX - 8MEG X 16 Async/Page/Burst CellularRAM Memory (Micron Technology)
MT4505 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
MT4506 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
MT4507 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
MT4550 - 40V Power MOSFET (MT Semiconductor)
MT4599C - P & N-Channel 60-V(D-S) MOSFET (Matrix Microtech)
MT4067-P - 256K x 1 DRAM (Micron)
MT40A1G16 - 1.2V DDR4 SDRAM (Micron)

Other Datasheets by Micron Semiconductor

MT45W2MV16PFA - (MT45WxMx16PFA) Async Cellularram Memory
MT45W2MW16B - (MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
MT45W2MW16BFB - (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory
MT45W2MW16PFA - (MT45WxMx16PFA) Async Cellularram Memory
MT45W4ML16PFA - (MT45WxMx16PFA) Async Cellularram Memory
MT45W4MV16PFA - (MT45WxMx16PFA) Async Cellularram Memory

Published: Apr 7, 2008 |