• Part: MT58L256L36P
  • Manufacturer: Micron Semiconductor
  • Size: 416.07 KB
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MT58L256L36P Key Features

  • Fast clock and OE# access times
  • Single +3.3V +0.3V/-0.165V power supply (VDD)
  • Separate +3.3V or +2.5V isolated output buffer supply (VDDQ)
  • SNOOZE MODE for reduced-power standby
  • Single-cycle deselect (Pentium® BSRAM-patible)
  • mon data inputs and data outputs
  • Individual BYTE WRITE control and GLOBAL WRITE
  • Three chip enables for simple depth expansion and address pipelining
  • Clock-controlled and registered addresses, data I/Os and control signals
  • Internally self-timed WRITE cycle

MT58L256L36P Description

The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18, 256K x 32, or 256K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK).